A 14% efficient nonaqueous semiconductor/liquid junction solar cell
نویسندگان
چکیده
منابع مشابه
Design and Simulation of a Highly Efficient InGaN/Si Double-Junction Solar Cell
A solar cell is an electronic device which not only harvests photovoltaic effect but also transforms light energy into electricity. In photovoltaic phenomenon, a P-N junction is created to form an empty region. The presented paper aims at proposing a new highly efficient InGaN/Si double-junction solar cell structure. This cell is designed to be used in a real environmental situation, so only s...
متن کاملAn efficient triple-junction polymer solar cell having a power conversion efficiency exceeding 11%.
Tandem solar cells have the potential to improve photon conversion efficiencies (PCEs) beyond the limits of single-junction devices. In this study, a triple-junction tandem design is demonstrated by employing three distinct organic donor materials having bandgap energies ranging from 1.4 to 1.9 eV. Through optical modeling, balanced photon absorption rates are achieved and, thereby, the photo-c...
متن کاملn-Type Si-based photoelectrochemical cell: New liquid junction photocell using a nonaqueous ferricenium/ferrocene electrolyte.
n-Type Si has been shown to serve as a stable photoanode in a cell for the conversion of light to electricity. The other components of the cell are a Pt cathode and an electrolyte consisting of an ethanol solution of [n-Bu(4)N]ClO(4) with a redox couple of ferricenium/ferrocene. Data from a two-compartment cell show that ferrocene is oxidized to ferricenium with 100 +/- 2% current efficiency at...
متن کاملHighly efficient single-junction GaAs thin-film solar cell on flexible substrate
There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The forme...
متن کاملp-n Junction Heterostructure Device Physics Model of a Four Junction Solar Cell
We present results from a p-n junction device physics model for GaInP/GaAs/GaInAsP/GaInAs four junction solar cells. The model employs subcells whose thicknesses have an upper bound of 5μm and lower bound of 200nm, which is just above the fully depleted case for the assumed doping of NA = 1 x 10 cm and ND = 1 x 10 cm. The physical characteristics of the cell model include: free carrier absorpti...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1984
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.95028